STMicroelectronics BYT11-1000
FAST RECOVERY RECTIFIER DIODES
| Part No. | BYT11-1000 |
|---|---|
| Datasheet | BYT11-1000 Download |
| Manufacturer |  STMicroelectronics |
| Description | FAST RECOVERY RECTIFIER DIODES |
| Buy | Stock & Price |
APPLICATIONS
ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES ABSOLUTE RATINGS (limiting values) Symbol IFRM IF (AV) IFSM Ptot Tstg Tj TL Parameter Repetive Peak Forward Current Average Forward Current * Surge non Repetitive Forward Current Power Dissipation * Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case tp ≤ 20µs Ta = 75°C δ = 0.5 tp = 10ms Sinusoidal Ta = 55°C F 126 (Plastic) Value 20 1 35 1.25 - 55 to + 150 - 55 to + 150 230 Unit A A A W °C °C Symbol VRRM Parameter 600 Repetitive Peak Reverse Voltage 600 BYT 11800 800 1000 1000 Unit V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 60 Unit °C/W * On infinite heatsink with 10mm lead length. November 1994 1/4 BYT11-600 → 1000ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Synbol IR VF Tj = 25°C Tj = 25°C Test Conditions VR = VRRM IF = 1A Min. Typ. Max. 20 1.3 Unit µA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A Irr = 0.25A Min.
