BYT200PIV-400 Datasheet | STMicroelectronics

EATURES AND BENEFITS n 2 x100 A 400 V 1.4 V A1 A2 K1 K2 2 1 1= 2= 3= 4= A1 K1 A2 K2 4 n n n LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY ISOLATED PACKAGE : 2500 VDC CAPACITANCE 42p F DESCRIPTION High current power rectifier diode suited for Switched Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in a medi um v oltage high c urrent applic ations such as welding equ ipment and Tele su pplies. ABSOLUTE MAXIMUM RATING Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak forward current Storage temperature range Maximum junction temperature Tc = 80° C δ = 0.5 tp = 10 ms Sinusoidal tp ® 10 µs ISOTOPTM Value 400 150 100 600 800 - 40 to + 150 150 Unit V A A A A °C °C ISOTOP is a trademark of STMicroelectronics May 2000 - Ed: 3C 1/5 THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per leg Total Coupling Value 0.55 0.33 0.1 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - VF - - Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25° C Tj = 100°C Tj = 25° C Tj = 125° C Pulse test : - tp = 5 ms, duty cycle < 2 % - - tp = 380 µs, duty cycle < 2% Min. Typ. 4 Max. 120 12 1.6 1.4 Unit µA m A V VR = VRRM IF = 100 A IF = 100 A 0.95 RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Test Conditions IF=0.5A IR=1A Irr=0.25A IF=1A d I/dt= -50A/µs Vr=30V d IF/dt=-200A/µs VR=400V d IF/dt=-200A/µs VR=400V Tj=125°C IF=100A Tj=125°C IF=100A 0.25 500 12 ns V Min. Typ. 55 100 40 A Max. Unit ns IRM S factor tfr VFP Reverse recovery current Softness factor Forward recovery time Peak forward voltage IF=100A d IF/dt=500A/µs Measured at 1.1 x VF max. Tj=25°C To evaluate the conduction losses use the following equation : P = 0.8 x IF(AV) + 0.00228 x...