BYT230PIV-1000 Datasheet | STMicroelectronics

EATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 p F Inductance< 5 n H DESCRIPTION Dual high voltage rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP, they are intended for use in Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature 2 x 30 A 1000 V 1.8 V 80 ns K2 A2 A2 K1 K1 A1 K2 A1 BYT231PIV-1000 ISOTOPTM (Plastic) Value 1000 tp=5 µs F=1k Hz 700 50 Tc = 55°C δ = 0.5 tp = 10 ms Sinusoidal 30 Unit V A A A IFSM Tstg Tj - 40 to + 150 150 A °C °C TM: ISOTOP is a registered trademark of STMicroelectronics. October 1999 - Ed: 3B 1/5 BYT230PIV-1000 / BYT231PIV-1000 THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 1.5 0.8 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF - IR - - Parameter Forward voltage drop Reverse leakage current Test Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C VR = VRRM IF = 30 A Min. Typ. Max. 1.9 1.8 100 5 µA m A Unit V Pulse test : - tp = 380 µs, δ < 2% - - tp = 5 ms, δ < 2% To evaluate the conduction losses use the following equation: P = 1.47 x IF(AV) + 0.010 IF2(RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25°C IF = 1A VR = 30V d IF/dt = - 15A/µs IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS (per diode) Symbol t IRM IRM Parameter Ma ximu m rev erse reco ve ry time Ma ximu m rev erse reco ve ry current...