Datasheet Details
| Part number | BYV10-40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 72.94 KB |
| Description | SMALL SIGNAL SCHOTTKY DIODES |
| Datasheet | BYV10-40_STMicroelectronics.pdf |
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Overview: ® BYV 10- 40 SMALL SIGNAL SCHOTTKY DIODES.
| Part number | BYV10-40 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 72.94 KB |
| Description | SMALL SIGNAL SCHOTTKY DIODES |
| Datasheet | BYV10-40_STMicroelectronics.pdf |
|
|
|
Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol IF(AV) IFSM Average Forward Current* Surge non Repetitive Forward Current Parameter Tamb = 60 °C Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Parameter Repetitive Peak Reverse Voltage Value 1 25 Sinusoidal Pulse 50 Rectangular Pulse - 65 to + 150 - 65 to + 125 230 °C °C °C Unit A A Symbol VRRM BYV 10-40 40 Unit V * On infinite heatsink with 4mm lead length THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 110 Unit °C/W * On infinite heatsink with 4mm lead length August 1998 Ed : 1A 1/4 BYV 10-40 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A * Pulse test: tp ≤ 300µs δ < 2%.
Test Conditions VR = VRRM Min.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BYV10-40 | Schottky barrier diodes | NXP |
| Part Number | Description |
|---|---|
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