DESCRIPTION
Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current* Surge non Repetitive Forward Current Tamb = 25 °C Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Value 60 1 20 Sinusoidal Pulse 40 Rectangular Pulse - 65 to + 150 - 65 to + 125 230 °C °C °C Unit V A A THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 110 Unit °C/W * On infinite heatsink with 4mm lead length August 1999 Ed: 1A 1/4 BYV 10-60 ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF * IF = 1A IF = 3A Tj = 25°C Test Conditions VR = VRRM Min. Typ. Max.
STMicroelectronics
