BYW77PI200 Datasheet | STMicroelectronics

EATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 p F DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOD93, or DOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOD93 (Plastic) BYW77P-200 isolated DOP3I (Plastic) BYW77PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 SOD93 TOP3I Tc=125°C Tc=100°C tp=10ms sinusoidal Parameter Value 50 25 25 500 - 40 to + 150 - 40 to + 150 Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 Ed : 2C 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter SOD93 DOP3I Value 1.0 1.8 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR - Tj = 25°C Tj = 100°C VF - - Tj = 125°C Tj = 125°C Tj = 25°C IF = 20 A IF = 40 A IF = 40 A Test Conditions VR = VRRM Min. Typ. Max. 25 2.5 0.85 1.00 1.15 Unit µA m A V Pulse test : - tp = 5 ms, duty cycle < 2 % - - tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A d IF/dt = -50A/µs tr = 5 ns tr = 5 ns 10 1.5 Min. Typ. Max. 35 50 ns V Unit ns 2/5 BYW77P/PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.05 =0.1 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0...