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BYW80F200 Datasheet High Efficiency Fast Recovery Rectifier Diodes

Manufacturer: STMicroelectronics

Overview: ® BYW80F/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF(AV) 20 A VRRM t(s)Tj (max) cVF (max) dutrr (max) 200 V 150°C 0.

General Description

u OSingle chip rectifier suited for Switch Mode Power d -Supplies and high frequency DC to DC converters.

ro )Packaged in TO-220AC, ISOWATT220AC and P t(sTO-220FPAC this device is intended for use in low voltage, high frequency inverters, free wheeling te cand polarity protection applications.

sole roduABSOLUTE MAXIMUM RATINGS b PSymbol O teVRRM oleIF(RMS) ObsIF(AV) Parameter Repetitive peak reverse voltage RMS forward current Average forward current TO-220AC A K TO-220AC BYW80-200 A K ISOWATT220AC BYW80F-200 A K TO-220FPAC BYW80FP-200 Tc=120°C Value 200 20 10 Unit V A A δ = 0.5 ISOWATT220AC Tc=95°C 10 TO-220FPAC IFSM Surge non repetitive forward current tp=10ms sinusoidal 100 A Tstg Storage and junction temperature range - 65 to + 150 °C Tj Maximum operating temperature range + 150 °C January 2002 - Ed: 3G 1/7 BYW80F/FP-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter TO-220AC ISOWATT220AC / TO-220FPAC Value 2.5 4.7 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions t(s)IR * Tj = 25°C VR = VRRM ducVF ** Tj = 100°C Tj = 125°C IF = 7 A Pro t(s)Tj = 125°C IF = 15 A lete ucTj = 25°C IF = 15 A dPulse test : * tp = 5 ms, duty cycle < 2 % so ro** tp = 380 µs, duty cycle < 2 % b PTo evaluate the conduction losses use the following equation : - O teP = 0.65 x IF(AV) + 0.027 x IF2(RMS) Min.

Key Features

  • te cs Suited for SMPS le us Very low forward losses ds Negligible switching losses so ros High surge current capability b Ps Insulated packages: - O teISOWATT220AC / TO-220FPAC: ) leInsulation voltage = 2000 V DC Capacitance = 12 pF ct(s bso.

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