BYW80PI-200
BYW80PI-200 is HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES manufactured by STMicroelectronics.
EATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 7 p F
DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in Isolated TO220AC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. isolated TO220AC (Plastic) BYW80PI-200
ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current δ = 0.5 Surge non repetitive forward current Storage and junction temperature range Tc=110°C tp=10ms sinusoidal Parameter Value 20 10 100
- 65 to + 150
- 65 to + 150 Unit A A A °C °C
Symbol VRRM
Parameter Repetitive peak reverse voltage
Value 200
Unit V
October 1999
Ed : 2C
1/5
THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Value 3.5 Unit °C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR
- T j = 25°C T j = 100°C VF
- - T j = 125°C T j = 125°C T j = 25°C IF = 7 A IF = 15 A IF = 15 A Test Conditions VR = VRRM Min. Typ. Max. 10 1 0.85 1.05 1.15 Unit µA m A V
Pulse test :
- tp = 5 ms, duty cycle < 2 %
- - tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV) + 0.027 x IF2(RMS)
RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25°C Tj = 25°C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A d IF/dt = -50A/µs tr = 10 ns tr = 10 ns 15 2 Min. Typ. Max. 25 35 ns V Unit ns
2/5
Fig.1 : Average forward power dissipation versus average forward current.
P F(av)(W)
=0.1 =0.05 =0.2 =0.5 =1
Fig.2 : Peak current versus form factor.
14 12 10 8 6 4 2
200 175 150 125 100
IM(A)
P=10W...
