BZV47C150 Datasheet | STMicroelectronics

FEATURES VOLTAGE RANGE : 5.1 V to 200 V HERMETICALLY SEALED PLASTIC CASE : F126 PACKAGE HIGH SURGE CAPABILITY : 55 W (10 ms) . DESCRIPTION 2 W silicon Zener diodes. F126 ABSOLUTE RATINGS (Tamb = 25°C) Symbol P Tstg Tj TL Parameter Value Tamb = 55°C 2 - 65 to + 175 175 230 Unit W °C °C °C Power dissipation on infinite heatsink Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s at 5mm from case THERMAL RESISTANCES Symbol R th (j-l) R th (j-a) Parameter Value 60 100 Unit °C/W °C/W Junction to lead Junction to ambient on printed circuit on remended pad layout January 1998 Ed : 2 1/4 BZV47C5V1 / BZV47C200 ELECTRICAL CHARACTERISTIC (Tamb = 25°C) TYPES VZT @ IZT min. max. (1) (1) V BZV47C5V1 BZV47C5V6 BZV47C6V2 BZV47C7V5 BZV47C10 BZV47C12 BZV47C15 BZV47C18 BZV47C20 BZV47C22 BZV47C24 BZV47C27 BZV47C30 BZV47C36 BZV47C39 BZV47C47 BZV47C68 BZV47C100 BZV47C150 BZV47C200 4.8 5.2 5.8 7 9.4 11.4 13.8 16.8 18.8 20.8 22.8 25.1 28 34 37 44 64 94 138 188 V 5.4 6 6.6 7.9 10.6 12.7 15.6 19.1 21.2 23.3 25.6 28.9 32 38 41 50 72 106 156 212 r ZK/ IZK max. IZT (1) Ω 5 2 2 2 4 7 10 15 15 15 15 15 15 40 40 45 80 200 300 350 m A 100 100 100 100 50 50 50 25 25 25 25 25 25 10 10 10 10 5 5 5 10-4/°C 1 2.5 3.2 4.5 5.5 6.5 7 7.5 7.5 8 8 8.5 8.5 8.5 9 9 9 9 9.5 9.5 µA 5 5 5 5 5 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 V 1 1 1 2 7.6 9.1 11.4 13.7 15.2 16.7 18.2 20.5 22.8 27.4 29.6 35.7 51.7 76 114 152 ∝VZ typ. I R / VR max. VR IZM Tamb=55°C (2) m A 370 330 300 250 185 155 130 105 94 86 78 69 62 52 48 40 27 18 12.8 9.4 IZSM (3) A 7.8 7.1 6.4 5.4 4 3.3 2.7 2.2 2 1.8 1.7 1.5 1.3 1.1 1 0.85 0.59 0.4 0.27 0.20 Note 1 : Pulse test : tp ≤ 50ms Note 2 : On infinite heatsink : L = 10mm Note 3 : rectangular waveform (tp = 10ms) Forward voltage drop : VF ≤ 1.2 V (Tamb = 25°C, I F = 500m A) Fig. 1 : Power dissipation versus ambient temperature. Fig. 2 :Thermal resistance versus lead length. 2/4 ® BZV47C5V1 / BZV47C200 Fig. 3 :...