STMicroelectronics BZW045V8
The curves of the figure 3 are specified for a junction temperature of 25 °C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : ∆VBR = αT * (Tamb -25) * VBR (25°C).| Part No. | BZW045V8 |
|---|---|
| Datasheet | BZW045V8 Download |
| Manufacturer |  STMicroelectronics |
| Description | TRANSILTM |
| Buy | Stock & Price |
FEATURES
PEAK PULSE POWER : 400 W (10/1000µs) STAND-OFF VOLTAGERANGE : From 5.8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZEDDESCRIPTION
Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC’s.ABSOLUTE MAXIMUM RATINGS
(Tamb = 25°C) Symbol PPP P IFSM Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s a 5mm from case. Tj initial = Tamb Tamb = 75°C tp = 10ms Tj initial = Tamb Value 400 1.7 30 Unit W W A °C °C °C F126 Tstg Tj TL - 65 to + 175 175 230 Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit.
