CB35000 Datasheet PDF | STMicroelectronics

STMicroelectronics CB35000

The CB35000 standard cell series uses a high performance, low voltage, triple level metal, HCMOS5S 0.5 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity. With an average gate density of 5500 gates/mm2, the CB35000 family allows the design of highly complex devices. The potential available gate count ranges above 1.5 Million equivalent gates.

Part No.	CB35000
Datasheet	CB35000 Download
Manufacturer	STMicroelectronics
Description	HCMOS STANDARD CELLS
Buy	Stock & Price

FEATURES

s s s s s s s 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 210 ps (typ) with fanout = 2. Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS. High drive I/O; capability of sinking up to 48 mA with slew rate control, current spike suppression and impedance matching. Generators to support SPRAM, DPRAM, ROM and MULT with BIST options. Extensive embedded function library including DSP and ST micros, popular third party micros and Synopsys synthetic libraries. s s s s s s s s s s s s Fully independent power and ground conﬁgurations for inputs, core and outputs. I/O ring capability up to 800 pads. Output buffers capable of driving ISA, EISA, PCI, MCA, and SCSI interface levels. Active pull up and pull down devices. Buskeeper I/O functions. Oscillators for wide frequency spectrum.