CB45000 - HCMOS6 STANDARD CELLS

Datasheet Summary

Description

The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity.

Features

s s s s s s s s s s s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2. Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels High drive I/O; capability of sinking up to 24 mA with slew rate control, curre.

STMicroelectronics

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Datasheet Details

Part number	CB45000
Manufacturer	STMicroelectronics
File Size	265.97 KB
Description	HCMOS6 STANDARD CELLS
Datasheet	CB45000 Datasheet
Additional preview pages of the CB45000 datasheet.

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® CB45000 SERIES HCMOS6 STANDARD CELLS FEATURES s s s s s s s s s s s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2. Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels High drive I/O; capability of sinking up to 24 mA with slew rate control, current spike suppression and impedance matching. Generators to support Single Port RAM, Dual Port RAM, and ROM with BIST options.

Published: Mar 23, 2005 |