STMicroelectronics D11NM60N
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | D11NM60N |
|---|---|
| Datasheet | D11NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@TJmax) STB11NM60N-1 STB11NM60N STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N 650 V 650 V 650 V 650 V 650 V 650 V RDS(on) max 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω 0.45 Ω ID 10 A 10 A 10 A 10 A 10 A(1) 10 A 1. Limited only by maximum temperature allowed● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance Application
● Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK 123 I²PAK 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagr
