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D12NF06 - N-Channel Power MOSFET

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

  • Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

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Datasheet Details

Part number D12NF06
Manufacturer STMicroelectronics
File Size 420.47 KB
Description N-Channel Power MOSFET
Datasheet download datasheet D12NF06 Datasheet
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STD12NF06T4 Datasheet N-channel 60 V, 80 mΩ typ., 12 A, STripFET II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. ID STD12NF06T4 60 V 0.1 Ω 12 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications PTOT 30 W G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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