Datasheet4U Logo Datasheet4U.com

D20N20 - N-Channel Power MOSFET

General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high-efficiency isolated DCDC converters.

Key Features

  • TYPE VDSS RDS(on) Id PW STD20N20 STF20N20 STP20N20 200 V 200 V 200 V < 0.125 Ω 18 A 90 < 0.125 Ω 18 A 25 < 0.125 Ω 18 A 90 s.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
D20N06E N-CHANNEL Power MOSFET CHONGQING PINGYANG ELECTRONICS
D20N10E N-CHANNEL Power MOSFET CHONGQING PINGYANG ELECTRONICS
D200 SIP DC/DC Converters uPD
D2001UK METAL GATE RF SILICON FET Seme LAB
D2002 Stereo Headphone Amplifier Shaoxing Silicore Technology

Other Datasheets by STMicroelectronics

Part Number Description
D20NF06 N-channel Power MOSFET
D20NF06L N-channel Power MOSFET
D20 Memory Micromodules
D2012 NPN Silicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET™ II MOSFET DATA BRIEF Table 1: General Features TYPE VDSS RDS(on) Id PW STD20N20 STF20N20 STP20N20 200 V 200 V 200 V < 0.125 Ω 18 A 90 < 0.125 Ω 18 A 25 < 0.125 Ω 18 A 90 s TYPICAL RDS(on) = 0.10 Ω s EXCEPTIONAL dv/dt CAPABILITY s LOW GATE CHARGE s 100% AVALANCHE TESTED Figure 1: Package 3 2 1 TO-220 3 2 1 TO-220FP DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DCDC converters.