STMicroelectronics D20NF06L
This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | D20NF06L |
|---|---|
| Datasheet | D20NF06L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STD20NF06L 60 V 40 mΩ 24 A● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
● Switching applications PTOT 60 W G(1) S(3) AM01475v1_noZenDESCRIPTION
Product status link STD20NF06L Product summary Order code STD20NF06LT4 Marking D20NF06L Package DPAK Packing Tape and reel DS3367 - Rev 5 - April 2022 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Derating factor dv/dt(2) Peak diode recovery voltage slope EAS(3) Single pulse avalanche energy Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 24 A, di/dt ≤ 300 A/ns, VDD = 80% V(BR)DSS 3.
