Datasheet4U Logo Datasheet4U.com

D4NK50Z - N-Channel MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP4NK50Z.

📥 Download Datasheet

Full PDF Text Transcription for D4NK50Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D4NK50Z. For precise diagrams, and layout, please refer to the original PDF.

STP4NK50Z - STP4NK50ZFP STD4NK50Z - STD4NK50Z-1 N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK...

View more extracted text
Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP4NK50Z STP4NK50ZFP STD4NK50Z STD4NK50Z-1 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 20 W 500 V < 2.7 Ω 3 A 45 W 500 V < 2.7 Ω 3 A 45 W s TYPICAL RDS(on) = 2.3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capabili

More Datasheets from STMicroelectronics

Part Number Description
D4NK60Z N-CHANNEL Power MOSFET