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D4NK60Z - N-CHANNEL Power MOSFET

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Zener-protected PTOT 70 W ID 4A.

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Full PDF Text Transcription for D4NK60Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for D4NK60Z. For precise diagrams, and layout, please refer to the original PDF.

STB4NK60Z-1, STB4NK60ZT4 STD4NK60Z-1, STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages TAB I2PAK 1 ...

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SH™ Power MOSFETs in I2PAK, D2PAK, IPAK and DPAK packages TAB I2PAK 1 2 3 TAB IPAK 3 2 1 TAB 3 D2PAK1 TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Product status STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 STD4NK60ZT4 Features Order codes VDS RDS(on) max. STB4NK60Z-1 STB4NK60ZT4 STD4NK60Z-1 600 V 2Ω STD4NK60ZT4 • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected PTOT 70 W ID 4A Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the w

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