STMicroelectronics D5NM60
STD5NM60
FEATURES
Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A 8 A(1) Pw 96 W 96 W 100 W 100 W 30 W● 100% avalanche tested
● HIgh dv/dt and avalanche capabilities
● Low input capacitance and gate charge
● Low gate input resistance Application
● Switching applications
DESCRIPTION
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 3 1 DPAK 3 1 D²PAK 3 2 1 TO-220 3 2 TO-220F1P 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD5NM60-1 STD5NM60T4 STB8NM60T4 STP8NM60 STP8NM60FP Marking D5NM60...