D7NB20 Datasheet PDF | STMicroelectronics

STMicroelectronics D7NB20

The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	D7NB20
Datasheet	D7NB20 Download
Manufacturer	STMicroelectronics
Description	STD7NB20
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ± 30 7 5 28 55 0.44 5.5 – 65 to 150 150 (1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns °C °C (●)Pulse width limited by safe operating area July 2002 1/10 Datasheet pdf - STD7NB20 / STD7NB20-1 THERMAL DATA Rthj-case Rthj-amb Tl...