D7NB20 Datasheet | STMicroelectronics

.Data Sheet.co.kr N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK Power MESH™ MOSFET TYPE STD7NB20 STD7NB20-1 s s s s s s STD7NB20 STD7NB20-1 VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 7A 7A TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DPAK TO-252 IPAK TO-251 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELE, INDUSTRIAL, AND LIGHTING EQUIPMENT...