DB-2933-54 - RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs
STMicroelectronics
General Description
The DB-2933-54 is a RF broadband power amplifier intended for linear or nonlinear operation over the band 1.6 to 54 MHz using 2x SD2933 gold metallized N-channel MOS field-effect transistors.
The temperature compensating biasing circuit supports class B and class AB operation.
RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs
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DB-2933-54
RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs
General feature
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Excellent thermal stability Frequency: 1.6 - 54MHz Supply voltage: 48V Output power: 400W typ. Input power 10W max. Efficiency: 57% - 76% IMD at 300WPEP < -26dBc Load mismatch: 3:1all phases
Description
The DB-2933-54 is a RF broadband power amplifier intended for linear or nonlinear operation over the band 1.6 to 54 MHz using 2x SD2933 gold metallized N-channel MOS field-effect transistors. The temperature compensating biasing circuit supports class B and class AB operation. DB-2933-54 is designed in cooperation with Specific RF Devices. (e-mail : specific.rf.devices@t-online.de)
Order Code
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DB-2933-54
October 2006
Rev 1
1/13
www.st.
DB-2933-54 Datasheet
