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DC34 Datasheet TRIGGER DIODES

Manufacturer: STMicroelectronics

General Description

High reliability glass passivation insuring parameter stability and protection against junction contamination.

DO 35 (Glass) ABSOLUTE RATINGS (limiting values) Symbol P Parameter Power dissipation on printed circuit (L = 10 mm) Repetitive peak on-state current Ta = 65 °C tp = 20 µs F= 100 Hz Value 150 Unit mW ITRM 2 A °C °C Tstg Tj Storage and operating junction temperature range - 40 to + 125 - 40 to + 125 THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction-leads Parameter Value 400 150 Unit °C/W °C/W April 1995 1/4 DB3 / DB4 / DC34 ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test Conditions DB3 VBO Breakover voltage * C = 22nF ** see diagram 1 MIN TYP MAX [I+VBOI-I-VBOI] I∆V± I VO IBO tr IB Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time * Leakage current * C = 22nF ** see diagram 1 ∆I = [IBO to IF=10mA] see diagram 1 see diagram 2 C = 22nF ** see diagram 3 VB = 0.5 VBO max see diagram 1 MAX MIN MIN MAX TYP MAX 100 28 32 36 Value DC34 30 34 38 ±3 5 5 50 1.5 10 100 DB4 35 40 45 V V V µA µs µA V Unit * Electrical characteristic applicable in both forward and reverse directions.

** Connected in parallel with the devices.

Overview

® DB3 /DB4 / DC34 TRIGGER DIODES.

Key Features

  • VBO : 32V / 34V / 40V.