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E53NC50 Datasheet PDF

STMicroelectronics E53NC50

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. E53NC50
Datasheet E53NC50 Download
Manufacturer
STMicroelectronics
Description STE53NC50
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E53NC50 datasheet page 1 preview

DESCRIPTION

ISOTOP INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER n

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj May 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (AC-RMS) Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 53 33 212 460 3.68 3 2500 – 65 to 150 150 (1) ISD≤ 53A, di/dt ≤100 A/µs, VDD≤ 24V, Tj ≤TjMAX Unit V V V A A A W W/°C V/ns V °C °C 1/8 (●)Pulse width limited by safe operating area STE53NC50 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 0.05 °C/W °C/W Thermal Res...
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