STMicroelectronics ESDA18-1F2
The ESDA18-1F2 is a single line Transil diode designed specifically for the protection of integrated circuits into portable equipment and miniaturized electronics devices subject to ESD and EOS transient overvoltages. Relative variation of leakage current versus junction temperature (typical values) C(pF) 300 F=1MHz VOSC=30mVRMS Tj=25°C IR[Tj] / IR[Tj=25°C] 100 VR=10V 250 200 150 10 100 50 VR(V) 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 25 50 Tj(°C) 75 100 125 3/8 Application information ESDA18-1F2 2...FEATURES
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● Stand-off voltage 16V Unidirectional device Low clamping factor VCL/VBR Fast response time Very thin package: 0.65 mm Flip Chip (4 bumps) Complies with the following standards
● IEC 61000-4-2 Level 4 – 15 kV (air discharge) – 8 kV (contact discharge) Figure 1. Pin configuration (bump side)
DESCRIPTION
A K B 1 A 2 K A K A TM: Transil is a trademark of STMicroelectronics. April 2008 Rev 2 1/8 8 Characteristics ESDA18-1F2 1 Characteristics Table 1. Symbol Absolute ratings (limiting value, per diode) Parameter and test conditions Peak pulse power dissipation 10 / 1000 µs pulse Value 100 Tj initial = Tamb 700 tp=10 ms Tj initial = Tamb 8 125 - 65 to + 175 A °C °C W Unit PPP Peak pulse power dissipation 8 / 20 µs pulse Non repetitive surge peak forward current Maximum operating junction temperature Storage temperature range IFSM Tj Tstg Table 2. Symbol VBR IRM VRM VCL Rd IPP C Electrical characteristics (Tamb = 25 °C) Parameter Breakdown voltage Leakage current Stand-off voltage Clamping voltage Dynamic impedance Peak pulse current Capacitance VBR IRM IR min. max. max. max.