ESDA6V1P6 Datasheet | STMicroelectronics

Features - 4 / 5 unidirectional (ESDA6V1P6 and ESDA6V1-5P6) and bidirectional (ESDA14V2BP6 and ESDA25-4BP6) Transil functions - Breakdown voltage: - VBR = 6.1 V min., 14.2 V min. and 25 V min. - Low leakage current: - < 500 n A (ESDA6V1P6 / ESDA6V1-5P6) - < 1 μA (ESDA14V2BP6 and ESDA25-4BP6) - Very small PCB area < 2.6 mm2 - Benefits: - High ESD protection level - High integration - Suitable for high density boards - plies with the standard IEC 61000-4-2 level 4: - 15 k V (air discharge) - 8 k V (contact discharge) - plies with MIL STD 883E - method 3015-7: Class3 - 25 k V (human body model) Applications Where ESD and EOS transient overvoltage protection in susceptible equipment is required, such as: - puters - Servers - Printers - munication systems and cellular phones - Video equipment These devices are particularly adapted to the protection of symmetrical signals. Description The ESDAxxx P6 are monolithic arrays designed to protect up to 5 lines against ESD transients. These devices are ideal where board space saving and reduced line capacitance are required. DS4625 - Rev 6 - August 2022 For further information contact your local STMicroelectronics sales office. .st. Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter IEC 61000-4-2 level 4 standard: Contact discharge VPP Peak pulse voltage Air discharge IEC 61000-4-2 level 4 standard for...