ESDA8V2-1MX2 Datasheet | STMicroelectronics

.. EOS and ESD Transil™ protection for charger and battery port Features - - - - Breakdown voltage VBR = 8.2 V Unidirectional device High peak power dissipation: 500 W (8/20 µs waveform) ESD protection level better than IEC 61000-4-2, level 4: 30 k V contact discharge Low leakage current (< 0.5 µA @ 5 V) Very small PCB area (1.45 mm2) Ro HS pliant Figure 1. Functional diagram (top view) µQFN 2L package - - - Benefits - - - - High EOS and ESD protection level High integration Suitable for high density boards Tiny package plies with the following standards: - IEC 61000-4-2 level 4 - ±15 k V (air discharge) - ±8 k V (contact discharge) MIL STD 883G - Method 3015-7: class 3B - HBM (human body model): ≥8k V - Applications Where EOS and ESD transient overvoltage protection in sensitive equipment is required, such as: - - - - - Description The ESDA8V2-1MX2 is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient overvoltages. puters Printers munication systems Cellular phone handsets and accessories Video equipment TM: Transil is a trademark of STMicroelectronics August 2008 Rev 1 1/10 .st. .. Characteristics...