ESDALC6V1-1BM2 Datasheet | STMicroelectronics

Features - - - - .. 1 line low capacitance TRANSIL diode Bidirectional ESD protection Breakdown Voltage VBR = 6.1 V min. Low diode capacitance (22 p F typ. at 0 V) Low leakage current: < 100 n A at 3 V Very small PCB area: 0.6 mm2 Leadfree package Functional diagram - - - I/O1 Description The ESDALC6V1-1BM2 is a bidirectional single line TVS diode designed to protect the datalines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. I/O2 Order code Part number ESDALC6V1-1BM2 Marking P Benefits - - - High ESD protection level High integration Suitable for high density boards plies with the following standards: IEC 61000-4-2 level 4 15 k V (air discharge) 8 k V (contact discharge) TM: TRANSIL is a trademark of STMicroelectronics MIL STD 883E - Method 3015-7: class 3 HBM (Human body model) January 2007 Rev 1 1/7 .st. Characteristics Characteristics Table 1. Symbol VPP(1) PPP(1) IPP Tj Tstg TL TOP Absolute maximum ratings (Tamb = 25° C) Parameter Peak pulse voltage (IEC 61000-4-2 contact discharge) Peak pulse power dissipation (8/20 µs) Repetitive peak pulse current (8/20 µs) Junction temperature Storage temperature range Maximum lead temperature for soldering during 10 s Operating temperature range Tj initial = Tamb Value ± 30 140 9 125 - 55 to + 150 260 - 40 to + 125 Unit k V W A °C °C °C °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Symbol VRM VBR VCL IRM IPP VF Electrical characteristics (Tamb = 25° C) Parameter Stand-of voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Forward voltage drop C@0V Bias typ. p F 22 VBR VRM IR IRM IRM IR VRM VBR V I VBR @ IR Part Number min. V ESDALC6V1-1BM2 6.1 max. V 8.0 m A 1 IRM @ VRM max. n A 100 V...