ESM2012DV
ESM2012DV is NPN DARLINGTON POWER MODULE manufactured by STMicroelectronics.
® ESM2012DV
NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION TO CASE s SPECIFIED ACCIDENTAL OVERLOAD
AREAS s ULTRAFAST FREEWHEELING DIODE
)s FULLY INSULATED PACKAGE (UL t(s PLIANT) cs EASY TO MOUNT us LOW INTERNAL PARASITIC INDUCTANCE rod INDUSTRIAL APPLICATIONS: Ps MOTOR CONTROL tes UPS
- Obsoles DC/DC & DC/AC CONVERTERS
ISOTOP INTERNAL SCHEMATIC DIAGRAM olete Product(s)ABSOLUTE MAXIMUM RATINGS bs Symbol
Parameter
O VCEV Collector-Emitter Voltage (VBE = -5 V)
Value 150
Unit V
VCEO(sus) Collector-Emitter Voltage (IB = 0)
120 V
VEBO Emitter-Base Voltage (IC = 0)
7V
IC Collector Current
120 A
ICM Collector Peak Current (tp = 10 ms)
180 A
IB Base Current
2A
IBM Base Peak Current (tp = 10 ms) Ptot Total Dissipation at Tc = 25 o C
4A 175 W
Visol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
-55 to 150 150
V o C o C
September 2003
1/8
THERMAL DATA
Rthj-case Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied
Max Max
Max
0.7 0.9
0.05 o C/W o C/W o C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
Symbol...
