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ESM765-800 Datasheet PDF

STMicroelectronics ESM765-800

This publication supersedes and replaces all information previously supplied.
Part No. ESM765-800
Datasheet ESM765-800 Download
Manufacturer
STMicroelectronics
Description RECOVERY RECTIFIER DIODES
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ESM765-800 datasheet page 1 preview

FEATURES

HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND IRM AT 100°C UNDER USERS CONDITIONS MOTOR CONTROLS AND CONVERTERS SWITCH MODE POWER SUPPLIES INSULATED PACKAGE: TO-220AC Insulating voltage = 2500 VRMS

DESCRIPTION

Fast recovery rectifiers suited for applications in combination with superswitch transistors. A K 10 A 800 V 150°C 1.35 V 300 ns TO-220AC Symbol VRRM IF(RMS) IF(AV) IFSM Ptot Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Power dissipation Storage temperature range Maximum operating junction temperature Tc = 100°C δ = 0.5 Tp = 10 ms Sinusoidal Tc = 100°C tp ≤ 20µs Value 800 16 10 120 20 - 40 to + 150 + 150 Unit V A A A W °C August 1999 - Ed: 2B 1/5 ESM765-800 THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 2 Unit °C/W STATIC

ELECTRICAL CHARACTERISTICS

Symbol IR * VF ** Parameters Reverse leakage current Forward voltage drop Test conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % Min.
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