STMicroelectronics F10NK50Z
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout.| Part No. | F10NK50Z |
|---|---|
| Datasheet | F10NK50Z Download |
| Manufacturer |  STMicroelectronics |
| Description | STF10NK50Z |
| Buy | Stock & Price |
FEATURES
Order code STF10NK50Z●
●
●
● VDSS 500 V RDS(on) max < 0.7 Ω ID 9A PTOT 30 W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance 1 2 3 TO-220FP
APPLICATIONS
● Switching applicationDESCRIPTION
In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order code Marking F10NK50Z Package TO-220FP Packaging Tube STF10NK50Z March 2012 This is information on a product in full production. Doc ID 022992 Rev 1 1/13 13 Contents STF10NK50Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................
