STMicroelectronics F11NM80
The MDmesh™ associates the multiple drain process with the Company’s PowerMesh™ horizontal layout assuring an outstanding low onresistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.| Part No. | F11NM80 |
|---|---|
| Datasheet | F11NM80 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS 800 V 800 V 800 V RDS(on) < 0.40 Ω < 0.40 Ω < 0.40 Ω < 0.40 Ω RDS(on)*Qg 14Ω*nC 14Ω*nC 14Ω*nC 14Ω*nC ID 11 A 11 A 11 A 11 A 3 1 STB11NM80 STF11NM80 STP11NM80 TO-247 D²PAK STW11NM80 800 V●
●
● Low input capacitance and gate charge Low gate input resistance Best RDS(on) *Qg in the industry 3 1 2 3 1 2 TO-220 TO-220FP Application
● Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking B11NM80 F11NM80 P11NM80 W11NM80 Package D²PAK TO-220FP TO-220 TO-247 Packaging Tape & reel Tube Tube Tube Order codes STB11NM80 STF11NM80 STP11NM80 STW11NM80 December 2007 Rev 9 1/17 17 Contents STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ................................................
