STMicroelectronics F13NK50Z
N-Channel Power MOSFET
FEATURES
Type STF13NK50Z STP13NK50Z STW13NK50Z●
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● VDSS 500 V 500 V 500 V RDS(on) max ID Pw 30 W 140 W 140 W TO-220 1 2 3 <0.48 Ω 11 A <0.48 Ω 11 A <0.48 Ω 11 A 3 1 2 TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram TO-247 2 1 3
APPLICATIONS
● Switching applicationDESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. Table 1. Device summary Order code Marking F13NK50Z P13NK50Z W13NK50Z Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube STF13NK50Z STP13NK50Z STW13NK50Z March 2009 Rev 2 1/15 15 Free Datasheet Contents STx13NK50Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .