F20NM50FD Datasheet PDF - STMicroelectronics N-CHANNEL POWER MOSFET Specs

F20NM50FD - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.

It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Figure 1.

Features

Type VDSS RDS(on) max RDS(on).
Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω.
nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω.
nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω.
nC 20 A 20 A 20 A.
High dv/dt and avalanche capabilities.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.
Tight process control and high manufacturing yields.

Datasheet Details

Part number	F20NM50FD
Manufacturer	STMicroelectronics
File Size	396.50 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	F20NM50FD Datasheet
Additional preview pages of the F20NM50FD datasheet.

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Full PDF Text Transcription

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STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode) Features Type VDSS RDS(on) max RDS(on)* Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 20 A 20 A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Tight process control and high manufacturing yields Application ■ Switching applications Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Published: Oct 25, 2019 |