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F21NM50N - STF21NM50N

Datasheet Summary

Description

- OThe devices are realized with the second )generation of MDmesh Technology.

This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the world's lowest on-resistance and dgate charge.

Features

  • Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P.
  • 100% avalanche tested te.
  • Low input capacitance and gate charge le.
  • Low gate input resistance bso.

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Datasheet Details

Part number F21NM50N
Manufacturer STMicroelectronics
File Size 448.99 KB
Description STF21NM50N
Datasheet download datasheet F21NM50N Datasheet
Additional preview pages of the F21NM50N datasheet.

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Full PDF Text Transcription

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STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoDescription - OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the world's lowest on-resistance and dgate charge.
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