F25NM60N
Overview
- 100% avalanche tested le du
- Low input capacitance and gate charge so ro
- Low gate input resistance - Ob te PApplication ) le
- Switching applications ct(s bsoDescription du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology. This P t(srevolutionary MOSFET associates a new vertical te cstructure to the company’s strip layout to yield one le uof the world’s lowest on-resistance and gate dcharge. It is therefore suitable for the most so rodemanding high efficiency converters 3 2 1 TO-220FP 3 1
