STMicroelectronics F2HNK60Z
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.| Part No. | F2HNK60Z |
|---|---|
| Datasheet | F2HNK60Z Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS RDS(on) max. ID STF2HNK60Z 600 V 4.8 Ω 2A● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STF2HNK60Z Product summary Order code STF2HNK60Z Marking F2HNK60Z Package TO-220FP Packing Tube DS13846 - Rev 1 - October 2021 For further information contact your local STMicroelectronics sales office. STF2HNK60Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT VISO Total power dissipation at TC = 25 °C Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1...
