F2HNK60Z
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.
Key Features
- Order codes VDS RDS(on) max. ID STF2HNK60Z 600 V 4.8 Ω 2A
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Zener-protected
