F6NK60Z - N-CHANNEL Power MOSFET

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/9 Free Datas.

STMicroelectronics

📥 Download Datasheet

Datasheet Details

Part number	F6NK60Z
Manufacturer	STMicroelectronics
File Size	322.58 KB
Description	N-CHANNEL Power MOSFET
Datasheet	F6NK60Z Datasheet
Additional preview pages of the F6NK60Z datasheet.

📁 Similar Datasheet

F6N60 - IRF6N60 (Suntac)

Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text

STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH™Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z s s s s s s VDSS 500 V 500 V 500 V RDS(on) < 1.2 Ω < 1.2 Ω < 1.2 Ω ID 5.6 A 5.6 A 5.6 A Pw 90 W 25 W 90 W 3 1 2 TYPICAL RDS(on) = 0.98 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Published: Feb 16, 2014 |