STMicroelectronics FERD20H100S
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter.| Part No. | FERD20H100S |
|---|---|
| Datasheet | FERD20H100S Download |
| Manufacturer |  STMicroelectronics |
| Description | 100V field-effect rectifier diode |
| Buy | Stock & Price |
FEATURES
● ST advanced rectifier process● Stable leakage current over reverse voltage
● Reduced leakage current
● Low forward voltage drop
● High frequency operation
● Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS sine
● ECOPACK2 compliant component
APPLICATIONS
● Switching diode● Notebook adapter
● LED lighting
● DC/DC converter
● MPPT
DESCRIPTION
With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes. DS11526 - Rev 4 - June 2020 For further information contact your local STMicroelectronics sales office. FERD20H100S Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms current 40 A IF(AV) TO-220AB, Average forward current, δ = 0.5 square wave...
