STMicroelectronics FERD40U50C
This dual rectifier is based on a proprietary technology that achieved the best in class VF/IR for a given silicon surface.FEATURES
● ST advanced rectifier process● Stable leakage current over reverse voltage
● Reduced leakage current
● Low forward voltage drop
● High frequency operation
● Insulated package: TO-220FPAB – Insulating voltage: 2000 VRMS sine Field effect rectifier Datasheet - production data
DESCRIPTION
Packaged in TO-220FPAB, this device is intended to be used in rectification and freewheeling operations in switch-mode power supplies. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) VF(typ) 2 x 20 A 50 V +175 °C 0.43 V June 2015 This is information on a product in full production. DocID027943 Rev 1 1/8 Characteristics 1 Characteristics FERD40U50C Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, δ = 0.5 Tc = 120 °C Tc = 90 °C Per diode Per device IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg St...