Datasheet Summary
STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package
- production data
TAB
2 3
1
D²PAK
Figure 1: Internal schematic diagram
Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
Applications
- Motor control
- UPS
- PFC
- General purpose inverter
Order code STGB10M65DF2
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of...