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G10M65DF2 - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Features

  • 6 µs of short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 10 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.
  • Maximum junction temperature: TJ = 175 °C.

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Datasheet preview – G10M65DF2

Datasheet Details

Part number G10M65DF2
Manufacturer STMicroelectronics
File Size 943.40 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet G10M65DF2 Datasheet
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    Full PDF Text Transcription

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    STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Positive VCE(sat) temperature coefficient  Low thermal resistance  Soft and very fast recovery antiparallel diode  Maximum junction temperature: TJ = 175 °C Applications  Motor control  UPS  PFC  General purpose inverter Order code STGB10M65DF2 Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
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