• Part: G15M65DF2
  • Description: Trench gate field-stop IGBT
  • Manufacturer: STMicroelectronics
  • Size: 915.56 KB
G15M65DF2 Datasheet (PDF) Download
STMicroelectronics
G15M65DF2

Key Features

  • 6 μs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 15 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C