STMicroelectronics G4M65DF2
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.| Part No. | G4M65DF2 |
|---|---|
| Datasheet | G4M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | Trench gate field-stop IGBT |
| Buy | Stock & Price |
FEATURES
● 6 µs of short-circuit withstand time● VCE(sat) = 1.6 V (typ.) @ IC = 4 A
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
DESCRIPTION
Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGB4M65DF2 Table 1: Device summary Marking Package G4M65DF2 D²PAK Packing Tape and reel November 2016 DocID028667 Rev 4 T
