G4M65DF2
Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.6 V (typ.) @ IC = 4 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Part: G4M65DF2
- Description: Trench gate field-stop IGBT
- Manufacturer: STMicroelectronics
- Size: 416.53 KB