G50IH65DF - Trench gate field-stop IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	G50IH65DF
Manufacturer	STMicroelectronics
File Size	666.30 KB
Description	Trench gate field-stop IGBT
Datasheet	G50IH65DF Datasheet
Note	This datasheet PDF includes multiple part numbers: G50IH65DF, GWA50IH65DF. Please refer to the document for exact specifications by model.
Additional preview pages of the G50IH65DF datasheet.

Product details

Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.

Features

Designed for soft-commutation only.
Maximum junction temperature: TJ = 175 °C.
VCE(sat) = 1.5 V (typ. ) @ IC = 50 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Low voltage drop freewheeling co-packaged diode Figure 1: Internal schematic diagram C (2) G (1) Sc12850_no_tab E (3).

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Published: May 2, 2019 |