G50IH65DF Datasheet PDF - STMicroelectronics Trench gate field-stop IGBT Specs

G50IH65DF - Trench gate field-stop IGBT

This page provides the datasheet information for the G50IH65DF, a member of the GWA50IH65DF Trench gate field-stop IGBT family.

Datasheet Summary

Description

The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.

A freewheeling diode with a low drop forward voltage is included.

Features

Designed for soft-commutation only.
Maximum junction temperature: TJ = 175 °C.
VCE(sat) = 1.5 V (typ. ) @ IC = 50 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Low voltage drop freewheeling co-packaged diode Figure 1: Internal schematic diagram C (2) G (1) Sc12850_no_tab E (3).

Datasheet Details

Part number	G50IH65DF
Manufacturer	STMicroelectronics
File Size	666.30 KB
Description	Trench gate field-stop IGBT
Datasheet	G50IH65DF Datasheet
Additional preview pages of the G50IH65DF datasheet.

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Full PDF Text Transcription

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STGWA50IH65DF Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 long leads package Datasheet - production data Features  Designed for soft-commutation only  Maximum junction temperature: TJ = 175 °C  VCE(sat) = 1.5 V (typ.) @ IC = 50 A  Minimized tail current  Tight parameter distribution  Low thermal resistance  Low voltage drop freewheeling co-packaged diode Figure 1: Internal schematic diagram C (2) G (1) Sc12850_no_tab E (3) Applications  Induction heating  Resonant converters  Microwave oven Description The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for softcommutation.

Published: May 2, 2019 |