G60V60DF
G60V60DF is Trench gate field-stop IGBT manufactured by STMicroelectronics.
STGW60V60DF, STGWA60V60DF STGWT60V60DF
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
- production data
3 2 1
TO-247
TO-247 long leads
Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 60 A
- Tight parameter distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
3 2 1
TO-3P
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
G (1)
E (3)
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum promise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)...
