GB10HF60KD Description
cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The robination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies. Internal schematic diagram Table.
GB10HF60KD Key Features
- Low on-voltage drop (VCE(sat))
- Operating junction temperature up to 175 °C
- Low Cres / Cies ratio (no cross conduction