STMicroelectronics GB10NB37LZ
The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.| Part No. | GB10NB37LZ |
|---|---|
| Datasheet | GB10NB37LZ Download |
| Manufacturer |  STMicroelectronics |
| Description | internally clamped IGBT |
| Buy | Stock & Price |
DESCRIPTION
Using the latest high voltage technology based on patented strip layout, SGS-Thomson has designed an advanced family of IGBTs with outstanding performances.APPLICATIONS
AUTOMOTIVE IGNITION D2PAK TO-263 INTERNAL SCHEMATIC DIAGRAM sABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM (● ) P tot E SD T s tg Tj June 1999 Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor ESD (Human Body Model) Storage T emperature Max. Operating Junction Temperature o o o Value CLAMPED 18 CLAMPED 20 20 60 125 0.83 4 -65 to 175 175 Un it V V V A A A W W /o C KV o o C C 1/8 (●) Pulse width limited by safe operating area Free Datasheet STGB10NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance C...
