Datasheet4U Logo Datasheet4U.com

GB10NC60K - short-circuit rugged IGBT

General Description

oleThis device utilizes the advanced Power MESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior.

Figure 1.

Table 1.

Key Features

  • Low on voltage drop (VCESAT).
  • Short-circuit withstand time 10 µs t(s).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GB10NB37LZ internally clamped IGBT ST Microelectronics
GB100DA60UP Insulated Gate Bipolar Transistor Vishay Siliconix
GB100TS60NPBF Ultrafast Speed IGBT Vishay Siliconix
GB10B60KD INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
GB10MPS17-247 Silicon Carbide Schottky Diode GeneSiC

Other Datasheets by STMicroelectronics

Part Number Description
GB10NC60KD short-circuit rugged IGBT
GB10NC60HD very fast IGBT
GB10NB60S low drop IGBT
GB10HF60KD short-circuit rugged IGBT
GB14NC60K IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features ■ Low on voltage drop (VCESAT) ■ Short-circuit withstand time 10 µs t(s)Applications c■ High frequency motor controls u■ SMPS and PFC in both hard switch and dresonant topologies ro■ Motor drives te PDescription oleThis device utilizes the advanced Power MESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. TAB 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Part number STGB10NC60KT4 Marking GB10NC60K Package D²PAK February 2011 Doc ID 11842 Rev 4 Packaging Tape and reel 1/11 www.st.com 11 Electrical ratings 1 Electrical ratings STGB10NC60K Table 2.