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GB19NC60HD - very fast IGBT

General Description

These devices are ultrafast IGBT.

They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • Very soft ultrafast recovery anti-parallel diode.

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Full PDF Text Transcription for GB19NC60HD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GB19NC60HD. For precise diagrams, and layout, please refer to the original PDF.

STGB19NC60HDT4, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with ultrafast diode TAB 3 1 D²PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figur...

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diode TAB 3 1 D²PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Datasheet - production data Features • Low on-voltage drop (VCE(sat)) • Very soft ultrafast recovery anti-parallel diode Applications • High frequency motor drives • SMPS and PFC in both hard switch and resonant topologies Description These devices are ultrafast IGBT. They utilize the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Part numbers STGB19NC60HDT4 STGF19NC60HD STGP19NC60HD STGW19NC60HD Table 1.