DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s ELECTRONIC IGNITION FOR AUTOMOTIVE ORDERING INFORMATION SALES TYPE STGB20NB32LZT4 STGB20NB32LZ-1 MARKING GB20NB32LZ GB20NB32LZ PACKAGE D2PAK I2PAK PACKAGING TAPE & REEL TUBE December 2003 1/11 STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) Eas Ptot ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 –65 to 175 175 Unit V V V A A A mJ W W/°C...
STMicroelectronics
