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GB20V60DF - IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.
  • Lead free package.

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Other Datasheets by STMicroelectronics

Part Number Description
GB20NC60V very fast IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB TAB 3 2 1 TO-220 3 1 D²PAK TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.